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Product Detailed Parameters
- Description：RF MOSFET JFET 30V TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Technology：JFET
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：15mA
- Noise Figure：-
- Current - Test：-
- Power - Output：-
- Voltage - Rated：30 V
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Configuration：N-Channel
Download product information
Overview
The onsemi 2N5245_J35Z is an N-channel RF JFET amplifier in a TO-92 package. It operates with a Drain-Gate Voltage of 30 V and Gate-Source Voltage of -30 V. The device supports a junction temperature range from -55°C to 150°C. Electrical characteristics include a Gate-Source Breakdown Voltage of -30 V, Zero-Gate Voltage Drain Current (IDSS) between 5 mA and 15 mA, and Forward Transfer Conductance (gfs) ranging from 4500 µmhos to 11000 µmhos at 1.0 kHz.
Feature Summary
- Designed for HF/VHF mixer and amplifier applications requiring sufficient gain and low noise for sensitive receivers.
Applications
- HF/VHF mixer circuits
- RF amplifier stages
- Sensitive receiver front ends
Procurement Notes
Verify the component status carefully as this part may be obsolete or discontinued by the manufacturer. Confirm that the specific ordering suffix matches the required package and electrical specifications. Ensure compatibility with existing designs before procurement due to potential lifecycle changes.
Selection Notes
Select this component when designing circuits for HF/VHF frequencies where low noise and adequate gain are critical. Verify that the operating conditions remain within the absolute maximum ratings, specifically the 30 V voltage limits and 150°C junction temperature. Consider the thermal resistance values for proper heat dissipation in the TO-92 package.
Part Context
This component belongs to the family of N-channel RF JFETs manufactured by onsemi (formerly Fairchild Semiconductor). It is housed in a standard TO-92 three-lead through-hole package. The device is engineered for radio frequency applications, providing specific small-signal characteristics suitable for signal processing in communication systems.
Replacement Considerations
Consult official datasheets for direct pin-compatible substitutes. Verify that any replacement maintains the same N-channel configuration, voltage ratings, and RF performance metrics such as gfs and IDSS ranges.
FAQ
What is the maximum Drain-Gate Voltage for the 2N5245?
The maximum Drain-Gate Voltage (VDG) is rated at 30 V.
What is the typical Forward Transfer Conductance (gfs)?
The Forward Transfer Conductance (gfs) ranges from 4500 µmhos to 11000 µmhos at 1.0 kHz with VGS = 0V and VDS = 15V.
Is this device suitable for life support applications?
No, the product is not authorized for use as a critical component in life support devices without express written approval.
