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Product Detailed Parameters
- Description：RF MOSFET JFET 30V TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Technology：JFET
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：15mA
- Noise Figure：-
- Current - Test：-
- Power - Output：-
- Voltage - Rated：30 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：TO-92-3
- Configuration：N-Channel
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Overview
The onsemi 2N5245_L99Z is an N-channel RF amplifier JFET designed for HF and VHF mixer and amplifier applications. It provides sufficient gain and low noise characteristics suitable for sensitive receiver circuits where standard processes are inadequate. The device operates with a drain-gate voltage of 30V and a gate-source breakdown voltage of -30V. It features a zero-gate voltage drain current ranging from 5 to 15 mA and a forward transfer conductance between 4500 and 11000 µmhos at 1.0 kHz. Total device dissipation is rated at 350 mW, with thermal resistance values of 125 °C/W junction-to-case and 357 °C/W junction-to-ambient.
Feature Summary
- Designed specifically for HF/VHF mixer and amplifier applications requiring high sensitivity
- Provides sufficient gain and low noise performance for sensitive receiver circuits
- Operates effectively in scenarios where standard manufacturing processes are insufficient
Applications
- HF/VHF mixer circuits
- RF amplifier stages
- Sensitive receiver front-end circuits
Procurement Notes
Verify the component status carefully as this part originates from Fairchild Semiconductor history now under onsemi. Confirm that the L99Z suffix corresponds to the specific packaging or tape-and-reel configuration required for your assembly line. Ensure compatibility with existing design files before finalizing procurement orders.
Selection Notes
Select this component when designing HF or VHF systems requiring low-noise amplification. Evaluate the thermal constraints given the 350 mW dissipation limit and ensure the operating environment stays within the specified temperature range. Compare the forward transfer conductance against circuit requirements to ensure adequate signal processing capability.
Part Context
This component belongs to the 2N5245 family of N-channel RF JFETs originally developed by Fairchild Semiconductor. These devices are engineered for radio frequency applications where standard discrete transistors fail to meet performance criteria. The technology focuses on optimizing gain and noise figures for communication equipment.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage and conductance to ensure functional equivalence in existing designs.
