2N5249 APM TIN/LEAD

$0.22

Description：TH TRANSISTOR-SMALL SIGNAL (<=1A
Series：-

SKU:8cde05a51d72 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：TH TRANSISTOR-SMALL SIGNAL (<=1A
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：125mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：30nA
DC Current Gain (hFE) (Min) @ Ic, Vce：400 @ 2mA, 5V
Power - Max：625 mW
Frequency - Transition：-
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5249 APM TIN/LEAD

Overview

The Central Semiconductor Corp 2N5249 APM TIN/LEAD is a PNP silicon epitaxial planar transistor housed in a TO-92 (TO-226AA) package. It features a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 1A. The device provides a DC current gain (hFE) ranging from 100 to 320 at a collector current of 10mA. Thermal performance includes a maximum power dissipation of 625mW at 25°C ambient temperature and a junction temperature range of -65°C to +175°C.

Feature Summary

PNP polarity configuration for general-purpose switching and amplification
Epitaxial planar construction for stable electrical characteristics
High thermal stability with extended junction temperature capability

Applications

General-purpose amplifier circuits
Low-power switching applications
Audio signal processing stages

Procurement Notes

Verify the specific suffix 'APM TIN/LEAD' against the manufacturer's official datasheet to confirm lead composition and plating specifications. Ensure the procurement order explicitly requests the Ammo Pack packaging format. Confirm RoHS exemption status if applicable, as tin/lead terminations may require specific compliance documentation for certain regulated environments.

Selection Notes

Select this component when a PNP transistor with an 80V collector-emitter voltage and 1A current capacity is required. The TO-92 package suits through-hole mounting constraints. Verify that the hFE range of 100 to 320 meets the circuit's gain requirements. Consider the 625mW power dissipation limit relative to the expected thermal environment and heat sinking capabilities.

Part Context

This part belongs to the standard discrete transistor family produced by Central Semiconductor Corp. It serves as a complement to NPN variants within the same voltage and current class. The component is designed for reliable operation in consumer electronics and industrial control systems requiring robust bipolar junction transistor performance.