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The Central Semiconductor Corp 2N5306 APM TIN/LEAD is a single NPN Darlington transistor designed for through-hole mounting. It features a maximum collector-emitter voltage (VCEO) of 40 V and a collector-base voltage (VCBO) of 40 V, with an emitter-base voltage (VEBO) rating of 12 V. The device supports a continuous DC collector current of 300 mA and a peak collector current of 500 mA. Power dissipation is rated at 625 mW. It operates within a temperature range of -65 °C to +150 °C. The unit utilizes a TO-92-3 package and includes tin/lead terminations.
Verify the specific ordering suffix against official documentation to confirm the presence of tin/lead plating, as this affects compliance and application suitability. Confirm availability status directly with the manufacturer or authorized distributors, as supply conditions may vary. Ensure the selected package matches the intended PCB footprint requirements.
Select this component when a single NPN Darlington transistor with a 40 V voltage rating and TO-92-3 through-hole package is required. Consider the 625 mW power dissipation limit and the -65 °C to +150 °C operating range for thermal management. Verify that the tin/lead termination meets the project's material specifications.
This part belongs to the Central Semiconductor 2N5308 series family of single NPN Darlington transistors. The manufacturer provides aerospace-qualified tin/lead conversion processes to eliminate tin whiskers on surface-mount and through-hole terminations. This service ensures reliability for sensitive electronic devices in critical applications.
Publicly confirmed substitute part numbers are not available in the provided source data.