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The Central Semiconductor 2N5308 is a single NPN Darlington transistor housed in a TO-92-3 through-hole package. It features a maximum collector-emitter voltage (VCEO) of 40 V and a collector-base voltage (VCBO) of 40 V, with an emitter-base voltage (VEBO) rating of 12 V. The device supports a maximum DC collector current of 500 mA and a continuous collector current of 300 mA. Power dissipation (Pd) reaches 1.5 W. It operates within a temperature range of -65°C to +150°C. Key electrical characteristics include a minimum DC current gain (hFE) of 7000 at 5 V and 2 mA, and a transition frequency (fT) of 60 MHz.
Verify the specific suffix 'APP TIN/LEAD' against the manufacturer's datasheet to confirm lead composition and plating specifications. Ensure the ordering quantity aligns with the manufacturer's standard packaging multiples, typically 2000 units per reel or ammo pack. Confirm RoHS compliance status if required by project specifications, as tin/lead variants may differ from lead-free equivalents.
Select this component when a high-gain switching element is needed in a compact TO-92-3 form factor. The 40 V rating suits low-voltage DC control systems. Verify that the 1.5 W power dissipation capability meets thermal requirements for the intended load. Consider the 60 MHz transition frequency for switching speed limitations compared to faster transistors.
The 2N5308 belongs to the standard NPN Darlington transistor family produced by Central Semiconductor. It is designed for general-purpose switching and amplification tasks where high current gain is critical. The TO-92-3 package provides a cost-effective solution for through-hole PCB assembly in consumer and industrial electronics.
Cross-reference with MPSA13 or MPSA29 for similar NPN Darlington configurations. Verify pinout compatibility and ensure voltage/current ratings meet or exceed the original design requirements before substitution.