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Product Detailed Parameters
- Description：TRANS NPN DARL 40V 0.3A TO-92-3
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- Transistor Type：NPN - Darlington
- Current - Collector (Ic) (Max)：300 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Vce Saturation (Max) @ Ib, Ic：1.4V @ 200µA, 200mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：7000 @ 2mA, 5V
- Power - Max：625 mW
- Frequency - Transition：60MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor 2N5308 PBFREE is a silicon NPN epitaxial planar Darlington transistor housed in a TO-92 case. It features a collector-emitter voltage of 40 V and a continuous collector current of 300 mA, with peak current reaching 500 mA. Power dissipation is rated at 625 mW at ambient temperature and 1.5 W with case cooling. The device offers high DC current gain (hFE) ranging from 7,000 to 20,000 depending on collector current. Transition frequency is 60 MHz, and it operates within a junction temperature range of -65°C to +150°C.
Feature Summary
- High current gain suitable for amplifier applications
- Epitaxial planar silicon construction
- Lead-free plating option available
Applications
- High gain amplifier circuits
- Switching applications requiring high input impedance
- Driver stages for power loads
Procurement Notes
Verify the ordering suffix when purchasing. Use 'PBFREE' for lead-free plated devices or 'TIN/LEAD' for tin/lead plating. Confirm the specific electrical requirements match the datasheet limits. Ensure the TO-92 package fits the design constraints. Check availability through authorized distributors or direct manufacturer channels.
Selection Notes
Select this component for designs requiring high current gain in a small through-hole package. Compare hFE values against circuit requirements, noting the variation between low and high collector currents. Consider thermal management if operating near maximum power dissipation limits. Verify voltage ratings align with the system's maximum supply voltages.
Part Context
This part belongs to the 2N5306/2N5308 series of NPN Darlington transistors. The 2N5308 variant specifically provides higher voltage ratings compared to the 2N5306. Both share similar current and gain characteristics but differ in breakdown voltage specifications. The series is designed for general-purpose high-gain amplification tasks.
Replacement Considerations
Direct substitutes include other NPN Darlington transistors with comparable voltage and current ratings. Verify pinout compatibility, especially emitter-collector-base orientation. Ensure replacement parts meet the same thermal resistance and gain specifications for equivalent performance.
