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The 2N5308 TRA PBFREE is a single NPN Darlington transistor manufactured by Central Semiconductor Corp. It utilizes a TO-92-3 through-hole package and operates within a temperature range of -65°C to +150°C. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 40 V, a maximum collector-base voltage (VCBO) of 40 V, and an emitter-base voltage (VEBO) of 12 V. The device supports a continuous DC collector current of 300 mA with a power dissipation rating of 625 mW. It features a minimum DC current gain (hFE) of 7000 at 5 V and 2 mA, and a transition frequency (fT) of 60 MHz.
Verify the specific suffix 'TRA' against official datasheets to confirm tape-and-reel packaging status versus bulk or ammo pack variants. Ensure the 'PBFREE' designation aligns with RoHS compliance requirements for your assembly process. Cross-reference the manufacturer's latest documentation to confirm active status and lead times before finalizing procurement plans.
Select this component when a high-gain NPN transistor is required in a TO-92 package. The 40 V voltage rating limits suitability for higher voltage applications. Consider the 625 mW power dissipation limit for thermal management. Verify that the 300 mA current capacity meets load requirements without exceeding safe operating area limits.
This part belongs to the 2N5308 series of Darlington transistors produced by Central Semiconductor. The series offers high beta values for efficient signal amplification. The TRA suffix typically indicates reel packaging, distinguishing it from bulk-packed equivalents. Central Semiconductor specializes in discrete semiconductors, including diodes, transistors, and MOSFETs.
Direct replacements must match the NPN Darlington configuration, TO-92-3 package, and 40 V VCEO rating. Verify equivalent hFE and fT specifications to ensure circuit compatibility. Check for pinout consistency to avoid board redesign.