SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Central Semiconductor Corp 2N5320 TIN/LEAD is a PNP silicon power switching transistor housed in a TO-39 metal can package. It supports a maximum collector current of 4 A and a collector-emitter breakdown voltage of 50 V. The device features a minimum DC current gain (hFE) of 40 and a transition frequency of 50 MHz. It operates within a junction temperature range of -65°C to 175°C.
Verify the specific manufacturer source, as the 2N5320 designation is utilized by multiple producers including Continental Device India Limited and Intersil/Renesas. Confirm that the TIN/LEAD suffix corresponds to the required plating specification for your assembly process. Ensure the datasheet matches the physical package dimensions and electrical parameters of the intended design requirements before finalizing procurement.
Select this component when a high-current PNP transistor with a robust metal case is required. The TO-39 package offers superior heat dissipation compared to plastic alternatives. Verify compatibility with existing circuit layouts designed for the TO-5 or TO-39 form factors. Consider the 50 V rating against peak transient voltages in the application environment.
The 2N5320 belongs to a family of general-purpose silicon power transistors often paired with the 2N5321 (NPN). These devices are commonly used in complementary push-pull amplifier stages and motor control interfaces. The TO-39 metal can construction provides environmental protection suitable for demanding industrial conditions.
The 2N5321 serves as the complementary NPN counterpart in many designs. Cross-reference datasheets from different manufacturers such as CDIL or Renesas to ensure pinout and parameter alignment.