2N5320 TIN/LEAD

2N5320 TIN/LEAD

$1.45
  • Description:75V 2A 10W TH TRANSISTOR-BIPOLAR
  • Series:-

SKU:aa906f0ab70b Category: Brand:

  
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Product Detailed Parameters

  • Description:75V 2A 10W TH TRANSISTOR-BIPOLAR
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):75 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):500µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 500mA, 4V
  • Power - Max:10 W
  • Frequency - Transition:50MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39
  • Grade:-
  • Qualification:-

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2N5320 TIN/LEAD

Overview

The Central Semiconductor Corp 2N5320 TIN/LEAD is a PNP silicon power switching transistor housed in a TO-39 metal can package. It supports a maximum collector current of 4 A and a collector-emitter breakdown voltage of 50 V. The device features a minimum DC current gain (hFE) of 40 and a transition frequency of 50 MHz. It operates within a junction temperature range of -65°C to 175°C.

Feature Summary

  • PNP polarity configuration for power switching applications
  • Metal TO-39 hermetic packaging for thermal stability
  • High collector current capability up to 4 A

Applications

  • General purpose small signal amplification
  • Power switching circuits
  • Industrial control systems

Procurement Notes

Verify the specific manufacturer source, as the 2N5320 designation is utilized by multiple producers including Continental Device India Limited and Intersil/Renesas. Confirm that the TIN/LEAD suffix corresponds to the required plating specification for your assembly process. Ensure the datasheet matches the physical package dimensions and electrical parameters of the intended design requirements before finalizing procurement.

Selection Notes

Select this component when a high-current PNP transistor with a robust metal case is required. The TO-39 package offers superior heat dissipation compared to plastic alternatives. Verify compatibility with existing circuit layouts designed for the TO-5 or TO-39 form factors. Consider the 50 V rating against peak transient voltages in the application environment.

Part Context

The 2N5320 belongs to a family of general-purpose silicon power transistors often paired with the 2N5321 (NPN). These devices are commonly used in complementary push-pull amplifier stages and motor control interfaces. The TO-39 metal can construction provides environmental protection suitable for demanding industrial conditions.

Replacement Considerations

The 2N5321 serves as the complementary NPN counterpart in many designs. Cross-reference datasheets from different manufacturers such as CDIL or Renesas to ensure pinout and parameter alignment.

2N5320 TIN/LEAD2N5320 TIN/LEAD
$1.45
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