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The onsemi 2N5322 is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage of 75 V and a continuous collector current rating of 2 A. The device is housed in a TO-39 metal can package, suitable for through-hole mounting. It offers a maximum power dissipation of 10 W and exhibits a DC current gain of at least 30 when tested at 500 mA and 4 V. The saturation voltage is specified as 700 mV maximum at 50 mA base and collector currents.
Verify component authenticity due to obsolete status. Confirm RoHS compliance requirements as the part may not meet current environmental standards. Check datasheet revisions for electrical parameter consistency. Ensure supplier provides traceable documentation. Validate package integrity upon receipt.
Select this component for applications requiring high current PNP switching in through-hole layouts. Consider the TO-39 package constraints for PCB design. Evaluate thermal management needs given the 10 W dissipation limit. Compare against modern equivalents if lead time or availability is critical.
The 2N5322 belongs to the legacy 2N series of silicon PNP transistors manufactured by onsemi. It serves as a counterpart to the 2N5321 NPN variant within the same product family. The TO-39 metal can package is a standard form factor for high-power discrete semiconductors from this era.
Consult official substitution guides for direct replacements. Verify pinout compatibility with TO-39 packages. Ensure voltage and current ratings meet or exceed original specifications.