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The Microchip Technology 2N5329 is a silicon NPN power bipolar junction transistor (BJT) designed for high-current applications. It features a maximum collector current of 20 A and a maximum power dissipation of 65 W. The device supports a transition frequency of 80 MHz and maintains a minimum DC current gain of 40. It operates at temperatures up to 175 °C and utilizes a through-hole package configuration.
Verify the specific manufacturer source, as this component has been produced by multiple entities including TelCom Semiconductor under Microchip Technology. Confirm RoHS compliance status directly with the supplier, as historical data indicates variations in environmental certification across different production batches and original manufacturers.
Select this component when a robust NPN transistor with 20 A continuous current capacity is required. Ensure the application voltage does not exceed the device limits and that adequate heat sinking is provided to manage the 65 W power dissipation. Verify package compatibility with existing board layouts before integration.
This part belongs to the legacy power BJT family often associated with TelCom Semiconductor, now part of Microchip Technology. It serves as a high-power alternative to lower-current variants within the same series, providing reliable performance in industrial and automotive environments requiring durable semiconductor switching solutions.
The 2N5330 is a confirmed public substitute offering similar characteristics but with higher current and power ratings. Evaluate pinout compatibility and thermal requirements when substituting to ensure circuit integrity.