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Product Detailed Parameters
- Description：TRANS PNP 90V 20A TO-61
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：20 A
- Voltage - Collector Emitter Breakdown (Max)：90 V
- Vce Saturation (Max) @ Ib, Ic：1.8V @ 2mA, 10mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：140 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Stud Mount
- Package / Case：TO-211MA, TO-210AC, TO-61-4, Stud
- Supplier Device Package：TO-61
- Grade：-
- Qualification：-
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Overview
The 2N5330 is a single NPN power bipolar junction transistor manufactured by Microchip Technology. It supports a maximum collector current of 30 A and dissipates up to 80 W of power. The device features a minimum DC current gain (hFE) of 40 and a transition frequency of 80 MHz. It operates at temperatures up to 175 °C and is designed for through-hole mounting.
Feature Summary
- High-power handling capability with 80 W dissipation rating
- High current capacity supporting up to 30 A collector current
- Extended thermal operation up to 175 °C
Applications
- Power switching circuits
- Linear regulation applications
- Amplifier stages requiring high current drive
Procurement Notes
Verify the specific manufacturer source, as historical data links this part to TelCom Semiconductor, Inc., which is associated with Microchip Technology. Confirm package type and pinout compatibility before integration. Ensure the component meets RoHS requirements if applicable to your design constraints. Check for any product change notifications that may affect specifications or manufacturing location.
Selection Notes
Select the 2N5330 when designs require high current handling exceeding 20 A and significant power dissipation capabilities. Compare against the 2N5329, which offers lower current and power ratings. Consider the 80 MHz transition frequency for moderate-speed switching or amplification needs. Ensure thermal management solutions support the 80 W dissipation requirement in the final assembly.
Part Context
This component belongs to the family of discrete semiconductor transistors produced by Microchip Technology. It serves as a robust solution for power electronics applications where high current and voltage handling are critical. The part is distinct from development tools or microcontrollers within the same manufacturer portfolio.
Replacement Considerations
The 2N5329 is a documented similar component. Note that it has a lower maximum collector current of 20 A and reduced power dissipation of 65 W compared to the 2N5330.
