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Product Detailed Parameters
- Description：100V 5A 6W TH TRANSISTOR-BIPOLAR
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：5:00 AM
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：1.2V @ 500mA, 5A
- Current - Collector Cutoff (Max)：100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 2A, 2V
- Power - Max：6 W
- Frequency - Transition：30MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39
- Grade：-
- Qualification：-
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Overview
The 2N5338 PBFREE is an NPN silicon high-current transistor manufactured by Central Semiconductor Corp. It features a maximum DC collector current of 5 A and a collector-emitter voltage rating of 100 V. The device operates within a temperature range of -65°C to +200°C TJ. Key electrical parameters include a gain bandwidth product of 30 MHz, a collector-base voltage of 100 V, and an emitter-base voltage of 6 V. Power dissipation is rated at 6 W with a collector-emitter saturation voltage of 1.2 V.
Feature Summary
- High current handling capability up to 5 A for robust power applications
- Extended thermal operating range supporting high-temperature environments
- Single configuration NPN silicon construction for standard switching and amplification
Applications
- High current switching circuits
- Power amplifier stages
- Industrial control systems requiring wide temperature tolerance
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to ensure compliance with lead-free requirements and package type. Confirm that the requested variant matches the exact electrical specifications required for the target application, particularly regarding thermal management and current ratings. Cross-reference part numbers with official distributor catalogs to avoid confusion with similar series components.
Selection Notes
Select this component when high collector current and broad operational temperature ranges are critical. Ensure the circuit design accommodates the specified power dissipation limits and thermal resistance characteristics. Verify that the voltage ratings align with peak transient conditions in the intended application environment to maintain reliability and performance standards.
Part Context
This transistor belongs to the high-current NPN silicon series from Central Semiconductor. It is designed for through-hole mounting in TO-39 packages. The device serves as a discrete semiconductor solution for power electronics, offering reliable performance in demanding industrial and commercial applications where robust current handling is essential.
Replacement Considerations
Consult official substitution guides for equivalent NPN transistors with matching current and voltage ratings. Verify pinout compatibility and thermal characteristics before implementing any alternative components in existing designs.
