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The 2N5339QFN/TR is an NPN bipolar junction transistor manufactured by Microchip Technology. It features a collector-emitter voltage rating of 100V and a continuous collector current capacity of 5A. The device is designed for through-hole mounting in TO-39 (TO-205AD) packages. It supports a maximum power dissipation of 1W and operates within a temperature range of -55°C to 200°C. The minimum DC current gain is specified as 60 at a collector current of 2A with a collector-emitter voltage of 2V.
Verify the specific manufacturer source, as historical data links this part number to Micrel prior to its acquisition by Microchip Technology. Confirm that the component matches the TO-39 physical dimensions and electrical specifications required for your circuit design. Ensure compatibility with existing thermal management solutions given the 1W dissipation limit.
Select this component when a high-current NPN transistor with a 100V breakdown voltage is required. The TO-39 package is suitable for applications needing durable through-hole integration. Consider the 200°C maximum junction temperature for high-thermal-stress environments. Verify that the 5A current rating meets the peak load requirements of the target application.
This component belongs to the family of single bipolar transistors offered by Microchip Technology. It serves as a discrete power semiconductor device intended for general-purpose amplification and switching tasks. The part number designation follows standard industry conventions for specifying voltage, current, and package type characteristics.
Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult official Microchip Technology resources or authorized distributors for verified equivalent components that match the 100V, 5A, and TO-39 specifications.