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Product Detailed Parameters
- Description：40V 300MA 625MW TH TRANSISTOR-SM
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：300 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 30mA, 300mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 50mA, 1V
- Power - Max：625 mW
- Frequency - Transition：250MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5366 is a PNP bipolar junction transistor (BJT) designed for switching and amplification applications. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. Key electrical specifications include a maximum DC collector current of 300 mA, a collector-emitter breakdown voltage (VCEO) of 40 V, and a collector-base voltage (VCBO) of 40 V. The device features an emitter-base voltage (VEBO) rating of 4 V and a power dissipation capacity of 625 mW. It offers a transition frequency (fT) of 250 MHz and a DC current gain (hFE) ranging from 100 to 300. The component operates within a temperature range of -65°C to +150°C.
Feature Summary
- PNP polarity configuration suitable for general-purpose switching and amplification tasks
- Silicon construction providing stable performance across a wide operating temperature range
- Through-hole TO-92-3 packaging facilitating standard board mounting techniques
Applications
- General-purpose switching circuits
- Amplifier stages requiring PNP topology
- Low-power signal processing applications
Procurement Notes
Verify the specific ordering suffix to confirm the tin/lead plating option, as lead-free variants may exist under different part numbers. Confirm RoHS compliance status if required by your manufacturing standards. Ensure the TO-92-3 package dimensions match your PCB footprint requirements. Check for any recent manufacturer updates regarding material composition or testing protocols before finalizing procurement.
Selection Notes
Select this component when a PNP transistor with moderate current handling and high voltage ratings is required. The 40 V breakdown voltage supports applications exceeding lower-voltage alternatives. The 300 mA collector current capability suits low-to-medium power loads. Consider the 625 mW power dissipation limit for thermal management planning. The TO-92-3 package is ideal for prototyping and low-volume production where surface mount options are not preferred.
Part Context
The 2N5366 belongs to the 2N53 series of discrete semiconductors manufactured by Central Semiconductor. This series focuses on reliable bipolar junction transistors for various electronic designs. Central Semiconductor provides these components in both surface mount and through-hole configurations to meet diverse assembly needs. The company emphasizes quality control and custom device development capabilities alongside standard product offerings.
Replacement Considerations
Cross-reference with other PNP transistors in the TO-92-3 package having similar VCEO and IC ratings. Verify pinout compatibility before substitution. Ensure replacement parts meet the same thermal and electrical specifications. Consult official datasheets for exact parameter matching.
