SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 2N5366 TRE PBFREE is a silicon PNP bipolar junction transistor manufactured by Central Semiconductor Corp. It is designed for switching and amplifier applications within the 2N53 series. The device utilizes a TO-92-3 through-hole package configuration. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 40 V, and an emitter-base voltage (VEBO) of 4 V. The component supports a continuous collector current of 300 mA with a power dissipation rating of 625 mW. It features a gain-bandwidth product (fT) of 250 MHz and operates across a temperature range from -65°C to +150°C.
Verify the specific suffix 'TRE' against official manufacturer documentation to confirm tape-and-reel packaging requirements. Ensure the part number matches the exact RoHS compliance status indicated in the latest datasheet. Confirm that the ordering quantity aligns with the manufacturer's standard reel size or cut-tape availability constraints.
Select this component when a PNP small-signal transistor with 40 V breakdown voltage and 300 mA current capability is required. The TO-92-3 package facilitates easy integration into through-hole PCB layouts. Consider the 625 mW power dissipation limit and thermal management needs for high-frequency applications utilizing its 250 MHz transition frequency.
This component belongs to the 2N53 series of discrete semiconductors produced by Central Semiconductor Corp. The series includes various NPN and PNP variants optimized for general-purpose switching and amplification tasks. The manufacturer provides these devices in multiple packaging options to accommodate different assembly processes.
Consult official substitution guides for equivalent PNP transistors with matching voltage and current ratings. Verify pinout compatibility before replacing the original component in existing designs.