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Product Detailed Parameters
- Description：40V 300MA 625MW TH TRANSISTOR-SM
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：300 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 30mA, 300mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 50mA, 1V
- Power - Max：625 mW
- Frequency - Transition：250MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5366 TRE TIN/LEAD is a PNP bipolar junction transistor (BJT) designed for switching and amplification applications. It utilizes silicon technology and features a single configuration housed in a TO-92-3 through-hole package. Key electrical specifications include a maximum collector current of 300 mA, a collector-emitter voltage rating of 40 V, and a collector-base voltage of 40 V. The device offers an emitter-base voltage of 4 V, a power dissipation capacity of 625 mW, and a transition frequency of 250 MHz. It operates within a temperature range from -65°C to +150°C.
Feature Summary
- PNP polarity configuration suitable for general-purpose switching and amplification tasks
- Silicon-based construction ensuring stable performance across wide thermal ranges
- Through-hole mounting style compatible with standard PCB layouts
Applications
- General-purpose signal amplification circuits
- Electronic switching applications requiring moderate current handling
- Low-power analog circuit designs
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm lead time and packaging variations. Confirm RoHS compliance status and tin/lead plating requirements prior to procurement. Ensure the selected variant matches the required through-hole package dimensions and pinout configuration for your design.
Selection Notes
Select this component when a PNP transistor with 40V breakdown and 300mA continuous current capability is required. Consider the TO-92-3 package constraints for thermal management at 625mW dissipation. Evaluate the 250MHz transition frequency against your signal bandwidth needs to ensure adequate performance margins.
Part Context
This part belongs to the 2N53 series of bipolar transistors manufactured by Central Semiconductor. It shares the TO-92-3 form factor common to many small-signal discrete semiconductors. The device represents a standard industry-compatible specification for low-to-medium power PNP applications.
Replacement Considerations
Cross-reference with other 2N5366 variants or generic PNP transistors meeting identical voltage, current, and package specifications. Verify pinout compatibility and thermal characteristics before substitution.
