2N5401 APP PBFREE

2N5401 APP PBFREE

$0.18
  • Description:150V 600MA 625MW TH TRANSISTOR-S
  • Series:-

SKU:cb9c1dc8a8ef Category: Brand:

  
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Product Detailed Parameters

  • Description:150V 600MA 625MW TH TRANSISTOR-S
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

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2N5401 APP PBFREE

Overview

The Central Semiconductor Corp 2N5401 APP PBFREE is a single PNP bipolar junction transistor (BJT) manufactured using silicon technology. It is housed in a TO-92-3 through-hole package and designed for general-purpose switching applications. The device supports a maximum collector current of 600 mA with a power dissipation rating of 625 mW. Key voltage ratings include a collector-emitter breakdown voltage (VCEO) of 150 V, a collector-base voltage (VCBO) of 160 V, and an emitter-base voltage (VEBO) of 5 V. The component operates within a temperature range of -65°C to +150°C and features a transition frequency (fT) of 300 MHz.

Feature Summary

  • PNP polarity configuration suitable for high-voltage switching circuits
  • Silicon construction ensuring stable operation across wide thermal ranges
  • Through-hole mounting capability via standard TO-92-3 leaded package

Applications

  • General-purpose signal and power switching
  • High-voltage amplifier stages
  • Complementary output driver circuits

Procurement Notes

Verify the specific suffix 'APP' against the manufacturer's official datasheet to confirm lead-free compliance and exact electrical tolerances. Confirm that the TO-92-3 package dimensions match your PCB footprint requirements. Ensure the 600 mA continuous collector current rating aligns with your circuit's peak load demands without exceeding the 625 mW power dissipation limit under your operating conditions.

Selection Notes

Select this component when a PNP transistor with 150 V collector-emitter voltage is required in a compact through-hole form factor. The 600 mA current capacity distinguishes it from lower-current small-signal variants. Consider the 300 MHz transition frequency for moderate-speed switching tasks. Verify that the ambient temperature environment remains within the specified -65°C to +150°C operational range for reliable performance.

Part Context

This part belongs to the 2N5401 series of PNP silicon transistors produced by Central Semiconductor. It serves as a general-purpose discrete semiconductor device intended for use in electronic circuits requiring reliable switching or amplification. The 'APP' designation typically indicates specific packaging or processing attributes defined by the manufacturer, while 'PBFREE' denotes lead-free material composition.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing with other manufacturers requires verifying identical pinouts, voltage ratings, and current capabilities.

2N5401 APP PBFREE2N5401 APP PBFREE
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