2N5401 TRE PBFREE

$0.18

Description：150V 600MA 625MW TH TRANSISTOR-S
Series：-

SKU:d2cd0a3fa210 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：150V 600MA 625MW TH TRANSISTOR-S
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Transistor Type：PNP
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：300MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5401 TRE PBFREE

Overview

The Central Semiconductor Corp 2N5401 TRE PBFREE is a single PNP silicon small-signal bipolar junction transistor (BJT) designed for through-hole mounting. It utilizes the TO-92-3 package configuration and operates within a temperature range of -65°C to +150°C. Key electrical specifications include a maximum collector-emitter breakdown voltage of 150 V, a continuous collector current rating of 600 mA, and a maximum power dissipation of 625 mW. The device features a minimum DC current gain of 60 at specified test conditions.

Feature Summary

High-voltage capability suitable for demanding signal processing applications
Robust thermal performance with an extended operating temperature range
Standardized through-hole packaging for reliable circuit integration

Applications

General-purpose switching circuits
Low-current precision analog designs
Preamplifier stages requiring high voltage tolerance

Procurement Notes

Verify the specific suffix 'TRE PBFREE' against official manufacturer documentation to confirm lead-free compliance and reel packaging specifications. Ensure that the ordering quantity aligns with the manufacturer's standard pack sizes. Cross-reference the datasheet revision date to guarantee compatibility with current design requirements and regulatory standards before finalizing procurement decisions.

Selection Notes

Select this component when a PNP transistor with 150 V collector-emitter voltage and 600 mA current capacity is required in a TO-92 package. Consider the 625 mW power dissipation limit and the -65°C to +150°C operating range for environmental suitability. Verify that the minimum hFE of 60 meets the specific gain requirements of the target circuit design.

Part Context

This part belongs to the 2N5401 series of PNP silicon transistors manufactured by Central Semiconductor. It serves as a general-purpose small-signal device compatible with standard TO-92 footprints. The product line supports various industrial and commercial applications requiring reliable bipolar transistor performance in compact through-hole configurations.