2N5401,412

Overview

The NXP USA Inc. 2N5401,412 is a PNP high-voltage silicon transistor housed in a TO-92 (SOT54) plastic package. It supports a maximum collector-emitter voltage of 150 V and a continuous collector current of 300 mA. The device features a transition frequency up to 300 MHz and a total power dissipation of 630 mW at 25 °C ambient temperature. Its DC current gain ranges from 50 to 240 depending on the operating current.

Feature Summary

• High voltage capability for robust circuit operation
• Low current handling suitable for signal processing
• General purpose switching and amplification functionality

Applications

• General purpose switching circuits
• Amplification stages
• Telephony applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm package type and tape/reel specifications. Confirm the active production status directly with NXP or authorized distributors, as discrete component availability can vary significantly across supply channels.

Selection Notes

Select this component when designing circuits requiring a PNP transistor with high voltage tolerance and moderate current capacity. Ensure the thermal resistance characteristics align with the PCB layout constraints. Verify that the required DC current gain meets the minimum threshold for the intended amplifier or switch configuration.

Part Context

This part belongs to the standard discrete semiconductor category, specifically bipolar junction transistors. It serves as the NPN complement counterpart to the 2N5551 within the same high-voltage family. The component utilizes a through-hole mounting style compatible with standard printed-circuit board manufacturing processes.

Replacement Considerations

The 2N5551 is the documented NPN complement. Other generic high-voltage PNP transistors may serve as substitutes if electrical parameters match, but official cross-reference data should be consulted.