2N5401TA

2N5401TA

  • Description:TRANS PNP 150V 0.6A TO-92-3
  • Series:-

SKU:82143b88c6b8 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PNP 150V 0.6A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:400MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Download product information

2N5401TA

Overview

The onsemi 2N5401TA is a PNP epitaxial silicon transistor housed in a TO-92 package. It supports a collector-emitter voltage of -150 V and a collector-base voltage of -160 V. The device handles a maximum collector current of -600 mA with a power dissipation rating of 625 mW. Electrical characteristics include a DC current gain ranging from 30 to 240, a transition frequency up to 400 MHz, and an output capacitance of 6 pF. Operating temperatures extend from -55°C to +150°C.

Feature Summary

  • PNP epitaxial silicon construction for general-purpose amplification
  • High collector-emitter breakdown voltage capability
  • Low noise figure performance suitable for sensitive circuits

Applications

  • Amplifier stages
  • Switching applications
  • General-purpose signal processing

Procurement Notes

Verify the specific suffix TA against official manufacturer documentation to confirm pinout configuration and packaging details. Ensure compatibility with design requirements regarding thermal management and voltage ratings before integration.

Selection Notes

Select this component for designs requiring high voltage handling and moderate current capacity in a compact through-hole format. Evaluate the transition frequency and noise figure specifications against circuit bandwidth and sensitivity requirements.

Part Context

This part belongs to the 2N5401 series of PNP bipolar junction transistors. It is manufactured by onsemi (formerly Fairchild Semiconductor) and utilizes standard TO-92 encapsulation for reliable through-hole mounting in electronic assemblies.

Replacement Considerations

Consult official substitution guides for equivalent PNP transistors with matching voltage and current ratings. Verify pinout alignment and thermal characteristics when considering alternative manufacturers.

FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is -150 V.

What is the DC current gain range?

The DC current gain (hFE) ranges from a minimum of 30 to a maximum of 240 under specified test conditions.

What is the transition frequency?

The current gain bandwidth product (fT) has a typical value of 400 MHz.

2N5401TA2N5401TA

Click on the inquiry