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The onsemi 2N5401TA is a PNP epitaxial silicon transistor housed in a TO-92 package. It supports a collector-emitter voltage of -150 V and a collector-base voltage of -160 V. The device handles a maximum collector current of -600 mA with a power dissipation rating of 625 mW. Electrical characteristics include a DC current gain ranging from 30 to 240, a transition frequency up to 400 MHz, and an output capacitance of 6 pF. Operating temperatures extend from -55°C to +150°C.
Verify the specific suffix TA against official manufacturer documentation to confirm pinout configuration and packaging details. Ensure compatibility with design requirements regarding thermal management and voltage ratings before integration.
Select this component for designs requiring high voltage handling and moderate current capacity in a compact through-hole format. Evaluate the transition frequency and noise figure specifications against circuit bandwidth and sensitivity requirements.
This part belongs to the 2N5401 series of PNP bipolar junction transistors. It is manufactured by onsemi (formerly Fairchild Semiconductor) and utilizes standard TO-92 encapsulation for reliable through-hole mounting in electronic assemblies.
Consult official substitution guides for equivalent PNP transistors with matching voltage and current ratings. Verify pinout alignment and thermal characteristics when considering alternative manufacturers.
The maximum collector-emitter voltage (VCEO) is -150 V.
The DC current gain (hFE) ranges from a minimum of 30 to a maximum of 240 under specified test conditions.
The current gain bandwidth product (fT) has a typical value of 400 MHz.