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The onsemi 2N5401YTA is a PNP silicon amplifier transistor housed in a TO-92 3L Ammo package. It features a collector-emitter voltage of -150 V and a maximum collector current of -600 mA. The device dissipates up to 625 mW with a junction-to-ambient thermal resistance of 200 °C/W. DC current gain ranges from 30 to 240 depending on the class, while the transition frequency reaches 400 MHz. Collector-emitter saturation voltage is specified at -0.2 V under standard conditions.
Verify the specific ordering suffix against official documentation to confirm packaging type and pinout configuration. Ensure that the procurement channel sources directly from authorized distributors or the manufacturer to guarantee component authenticity and traceability. Cross-reference the datasheet revision date with the delivered lot to ensure compliance with current manufacturing specifications.
Select this component when high collector-emitter voltage ratings are required alongside low noise performance. Evaluate the thermal resistance limits relative to the expected ambient temperature and power dissipation requirements. Confirm that the DC current gain class meets the specific circuit design constraints for the intended operating point and load conditions.
This part belongs to the 2N5401 series of bipolar junction transistors originally developed by Fairchild Semiconductor and now managed by onsemi following corporate acquisition. The series represents a standard general-purpose NPN/PNP complementary pair component widely utilized in discrete electronic designs requiring reliable switching and linear amplification capabilities across various industrial applications.
The suffix '-C' denotes a counter-collector configuration where the pin order is Emitter, Collector, and Base.
The noise figure is typically 8 dB when measured at a collector current of -250 µA and a source resistance of 1 kΩ.
DC current gain is categorized into Standard Class (min 60) and Y Class (min 120) at specific test currents.