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Product Detailed Parameters
- Description：TRANS NPN 100V 7A TO-66
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：7:00 AM
- Voltage - Collector Emitter Breakdown (Max)：100 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：40 W
- Frequency - Transition：30MHz
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-213AA, TO-66-2
- Supplier Device Package：TO-66
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N5430 is a power NPN silicon bipolar junction transistor housed in a metal TO-66 flange mount package. It supports a maximum collector current of 7A and a collector-emitter breakdown voltage of 100V. The device features a high DC current gain (hFE) ranging from 60 to 240 at specified operating conditions, with a saturation voltage of 2.0V at 7A. It offers a transition frequency of 30MHz and a maximum power dissipation of 40W.
Feature Summary
- High-power capability within a rugged metal TO-66 flange mount enclosure
- Optimized for linear and switching applications with defined hFE ranges
- Designed for robust thermal management via direct case mounting
Applications
- High-current power amplification stages
- Industrial switching circuits requiring high collector current
- Linear regulator output devices
Procurement Notes
Verify the specific ordering suffix required for plating options, such as PBFREE or TIN/LEAD, when placing orders. Confirm availability status directly with the manufacturer or authorized distributors, as this component may be subject to discontinuation notices or limited stock constraints. Request updated datasheets to ensure compliance with current electrical specifications before finalizing procurement.
Selection Notes
Select this component for designs requiring high collector current handling up to 7A in a through-hole metal package. Ensure the application circuit provides adequate heat sinking to manage the 40W power dissipation rating. Verify that the required DC current gain falls within the 60 to 240 range specified for your operating point. Consider the TO-66 package dimensions for board layout and thermal interface requirements.
Part Context
This part belongs to the Central Semiconductor power transistor family utilizing the TO-66 metal can package. It is designed for high-reliability applications where robust mechanical construction and efficient thermal transfer are critical. The series includes various NPN and PNP variants with differing voltage and current ratings.
Replacement Considerations
Official replacement information is not available; the product is listed as End of Life (EOL). Consult [email protected] for potential alternate sources or technical data regarding compatible substitutes.
