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The onsemi 2N5484_D26Z is an N-channel RF small-signal Junction Field-Effect Transistor (JFET) designed for very high frequency band applications. It operates in depletion mode and utilizes silicon technology within a TO-92 cylindrical package. Key electrical characteristics include a drain-gate voltage rating of 25V, a source-gate voltage rating of 25V, and a maximum drain current of 30mA. The device features a maximum feedback capacitance (Crss) of 1 pF, supporting its function as a high-frequency amplifier or switch.
Verify the specific suffix _D26Z against official onsemi documentation to confirm exact binning or tape-and-reel specifications. Ensure compatibility with TO-92 through-hole mounting requirements. Confirm RoHS status and lead-free compliance details directly from the manufacturer's datasheet before integration into production designs.
Select this component when a depletion-mode N-channel JFET is required for very high frequency signal handling. Consider the 30mA drain current limit and 25V voltage ratings during circuit design. Evaluate thermal resistance parameters relative to the FR-4 PCB environment if ambient temperature management is critical for long-term reliability.
This part belongs to the 2N5484 series of N-channel JFETs, which also includes variants such as MMBF5484 and 2N5486. These devices share similar core technologies but may differ in cutoff voltage ranges and zero-gate voltage drain currents. The series is commonly utilized in low-noise RF front-end stages and impedance matching networks.
Direct substitutes include other N-channel JFETs with comparable Vgs and Id ratings, such as the 2N5485 or 2N5486, provided pinout compatibility with the TO-92 package is maintained. Verify that replacement parts meet the same very high frequency performance criteria and feedback capacitance limits.