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Product Detailed Parameters
- Description：JFET
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The 2N5485 is an N-channel Junction Field-Effect Transistor (JFET) designed for Ultra High Frequency (UHF) band applications. It utilizes silicon technology and operates in depletion mode within a cylindrical TO-92 through-hole package. The device features a maximum power dissipation of 0.31 W and supports operating temperatures up to 150 °C. Key electrical characteristics include a maximum feedback capacitance (Crss) of 1 pF, ensuring suitability for RF small signal processing tasks.
Feature Summary
- Optimized for UHF band RF small signal amplification
- Utilizes silicon junction technology for reliable operation
- Designed for single FET configuration in depletion mode
Applications
- Ultra High Frequency (UHF) band signal processing
- RF small signal amplification circuits
- General-purpose discrete transistor applications requiring low feedback capacitance
Procurement Notes
Verify the manufacturer designation carefully, as sources indicate Micro Electronics rather than Microchip Technology for this specific part number. Confirm RoHS compliance status, which is listed as not qualified in available documentation. Ensure the TO-92 through-hole package matches your PCB layout requirements before ordering.
Selection Notes
Select this component when a low-capacitance N-channel JFET is required for UHF frequencies. The 1 pF Crss value is critical for high-frequency performance. Verify that the 0.31 W power dissipation limit meets your thermal design constraints. Ensure the depletion mode operation aligns with your circuit biasing strategy.
Part Context
This component belongs to the category of discrete semiconductors, specifically field-effect transistors. It serves as a fundamental building block for analog and RF circuits where low noise and high input impedance are necessary. The TO-92 package provides a cost-effective solution for through-hole assembly in consumer and industrial electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official datasheets for direct pin-compatible replacements or perform functional equivalence analysis using parameters such as Vgs(off), Idss, and Crss.
