2N5485

Overview

The onsemi 2N5485 is a silicon N-channel RF small-signal Junction Field-Effect Transistor (JFET) designed for ultra-high frequency applications. It utilizes a depletion mode operation within a TO-92 through-hole package. Key electrical parameters include a gate-source breakdown voltage of -25 V and a continuous drain current rating of 10 mA. The device supports a maximum power dissipation of 350 mW and operates across a temperature range from -55°C to +150°C. Its forward transconductance ranges from 0.0035 S to 0.007 S, with a maximum feedback capacitance of 1 pF.

Feature Summary

• Optimized for ultra-high frequency signal processing and switching tasks
• Provides low noise performance suitable for sensitive RF circuits
• Features interchangeable source and drain terminals in compatible packages

Applications

• Low noise amplification in radio frequency systems
• High-speed electronic switching applications
• Analog switch implementations requiring low on-resistance

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm the specific suffix indicates the correct packaging variant. Ensure compatibility with existing thermal management designs given the specified power dissipation limits. Validate that the procurement channel provides traceable documentation for quality assurance purposes.

Selection Notes

Select this component when designing circuits requiring an N-channel JFET with specific RF characteristics. Compare the -25 V gate-source breakdown voltage against circuit requirements. Evaluate the 10 mA continuous drain current limit for load handling. Consider the TO-92 package constraints for board layout and thermal considerations during the selection process.

Part Context

This part belongs to the family of N-channel RF amplifiers including MMBF5484 and MMBF5486. These devices share similar Process 50 technology origins. They are primarily intended for electronic switching and low-noise amplification roles. The 2N5485 specifically targets applications needing robust RF performance in a standard through-hole configuration.

Replacement Considerations

Direct substitutes include the MMBF5485 in surface-mount formats or equivalent N-channel JFETs with matching -25 V ratings. Verify pinout compatibility if replacing with different package types. Ensure replacement parts meet the same ultra-high frequency band requirements.