2N5550-AP

Overview

The MCC 2N5550-AP is an NPN plastic encapsulated transistor designed for general-purpose amplification and switching applications. It features a collector current (ICM) of 0.6A, a collector-base breakdown voltage (V(BR)CBO) of 160V, and a collector-emitter breakdown voltage (V(BR)CEO) of 140V. The device supports power dissipation up to 625mW and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a DC current gain (hFE) ranging from 60 to 250 depending on collector current, a transition frequency (fT) between 100MHz and 300MHz, and low saturation voltages. The component utilizes a TO-92 package.

Feature Summary

• High voltage capability with a collector-base breakdown voltage of 160V suitable for demanding circuit environments
• Low noise figure performance optimized for sensitive signal amplification tasks
• Robust thermal stability allowing operation across extended temperature ranges from -55°C to 150°C

Applications

• General purpose high voltage amplifier circuits
• Switching applications requiring moderate current handling
• Telephony equipment signal processing

Procurement Notes

Verify the specific ordering suffix to confirm packaging type and compliance status. The -AP suffix indicates ammo packing, while -BP denotes bulk packaging. Ensure the presence of the -HF suffix if halogen-free material composition is required for your manufacturing process. Confirm RoHS compliance through the standard P suffix designation when applicable. Always source from authorized distributors to guarantee part authenticity and traceability.

Selection Notes

Select this component for designs requiring NPN amplification with high voltage tolerance up to 160V. Consider the 0.6A continuous collector current limit for load requirements. Evaluate the hFE range of 60 to 250 against your biasing needs. The TO-92 package dictates physical layout constraints. Verify that the 625mW power dissipation rating aligns with your thermal management strategy under expected operating conditions.

Part Context

This component belongs to the family of NPN silicon epitaxial planar transistors manufactured by Micro Commercial Components. It serves as a standard discrete semiconductor device for electronic circuits. The 2N5550 designation follows industry-standard naming conventions for NPN transistors. MCC produces this device in various packaging options to suit different assembly volumes and environmental specifications.

Replacement Considerations

Direct substitutes include PMST5550 from Nexperia, which offers similar NPN high-voltage characteristics in a compact SMD package. Other generic replacements may exist but require verification of pinout compatibility and electrical parameter alignment. Ensure any alternative meets the 160V collector-base voltage and 0.6A current requirements.