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Product Detailed Parameters
- Description：TRANS NPN 140V 0.6A TO92
- Series：-
- Mfr：onsemi
- Package：Bulk,Tape & Box (TB)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：140 V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The 2N5550RLRP is an NPN silicon epitaxial planar transistor manufactured by onsemi. It features a collector-emitter voltage of 140 V and a continuous collector current of 600 mA. The device provides a DC current gain ranging from 60 to 250 and a transition frequency up to 300 MHz. Total device dissipation reaches 625 mW at 25°C ambient temperature. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-92 package.
Feature Summary
- High-voltage amplification capability with 140 V collector-emitter breakdown
- Broad DC current gain range supporting diverse biasing requirements
- High-frequency performance suitable for signal processing applications
Applications
- General-purpose high-voltage amplifier circuits
- Switching applications requiring moderate current handling
- Audio preamplifier stages
Procurement Notes
Verify the specific ordering suffix RLRP corresponds to the Tape & Ammo Box packaging configuration containing 2000 units per box. Confirm that the component meets Pb-Free package standards if required by assembly specifications. Ensure compatibility with TO-92 through-hole mounting processes during integration planning.
Selection Notes
Select this component when a robust NPN transistor with 140 V collector-emitter voltage is required. The 600 mA continuous current rating supports moderate load switching. Consider the 300 MHz transition frequency for high-speed signal applications. Verify thermal management needs against the 625 mW dissipation limit in ambient conditions.
Part Context
This part belongs to the 2N5550/2N5551 family of NPN silicon amplifier transistors. The 2N5550 variant specifically offers 140 V collector-emitter voltage, distinguishing it from the 2N5551 which provides 160 V. Both share identical physical packages and general electrical characteristics except for breakdown voltage ratings.
Replacement Considerations
Direct substitutes include other manufacturers' 2N5550 equivalents such as those from NXP or Samsung. Cross-reference datasheets for pinout compatibility and ensure voltage and current ratings meet or exceed original design parameters.
