2N5551_J18Z

$0.04

Description：TRANS NPN 160V 0.6A TO-92-3
Series：-

SKU:f8b5ca3d582a Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 160V 0.6A TO-92-3
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：160 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5551_J18Z

Overview

The onsemi 2N5551_J18Z is an NPN silicon general-purpose amplifier transistor designed for high-voltage applications. It operates within a collector-emitter voltage of 160 V and supports a continuous collector current of 600 mA. The device features a DC current gain (hFE) ranging from 80 to 250 at IC = 10 mA, with a transition frequency (fT) of 100 MHz. Thermal characteristics include a maximum power dissipation of 625 mW and a junction-to-ambient thermal resistance of 200 °C/W. It functions reliably across a temperature range of -55 °C to +150 °C.

Feature Summary

Designed for general-purpose high-voltage amplification and gas discharge display drivers
Compliant with Pb-Free, Halogen Free, and BFR Free standards

Applications

General-purpose high-voltage amplifiers
Gas discharge display drivers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping configuration. Check the latest datasheet revision history for discontinuation status or parameter updates. Ensure compliance with RoHS requirements if applicable to your manufacturing process. Confirm availability through authorized distributors as stock levels fluctuate.

Selection Notes

Select this component when a robust NPN transistor with high breakdown voltage is required for linear or switching circuits. Consider the TO-92-3 package constraints for thermal management in low-power designs. Evaluate the hFE binning options if precise gain control is necessary for the application circuit.

Part Context

This part belongs to the 2N5551 series of NPN bipolar junction transistors manufactured by onsemi. It serves as a standard replacement for legacy high-voltage discrete semiconductor components used in consumer electronics and industrial control systems requiring reliable amplification capabilities.

Replacement Considerations

Consult the manufacturer's cross-reference tools for parametrically similar parts. Verify pinout compatibility and electrical ratings before substituting with alternative manufacturers' equivalents.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.