2N5551G

2N5551G

$0.07
  • Description:TRANS NPN 160V 0.6A TO92
  • Series:-

SKU:c1ca545f1d68 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 160V 0.6A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):160 V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

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2N5551G

Overview

The onsemi 2N5551G is an NPN silicon general-purpose amplifier transistor designed for high-voltage applications. It operates within a collector-emitter voltage of 160 V and supports continuous collector currents up to 600 mA. The device features a transition frequency (fT) of 100 MHz at IC = 10 mA, VCE = 10 V. Total power dissipation is rated at 625 mW with a thermal resistance junction-to-ambient of 200 °C/W. DC current gain ranges from 80 to 250 at IC = 10 mA, VCE = 5 V. Collector-emitter saturation voltage is 0.20 V max at IC = 50 mA, IB = 5.0 mA. Operating temperature spans -55 °C to +150 °C.

Feature Summary

  • Designed for general-purpose high-voltage amplifiers
  • Suitable for gas discharge display drivers
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant

Applications

  • General-purpose high-voltage amplifiers
  • Gas discharge display drivers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping configuration. Check the latest datasheet revision history for discontinuation status, as certain variants like the 2N5551YBU have been marked discontinued. Ensure compliance with environmental standards such as Pb-Free and RoHS requirements specified in the product description.

Selection Notes

Select this component when a single NPN bipolar junction transistor is required for high-voltage signal amplification or switching tasks. Consider the 160 V collector-emitter breakdown voltage and 600 mA continuous current capability for circuit design limits. Evaluate the 625 mW power dissipation rating and thermal resistance values to ensure adequate heat management within the specified -55 °C to +150 °C operating temperature range.

Part Context

The 2N5551 belongs to the family of NPN silicon epitaxial planar transistors manufactured by onsemi. It serves as a standard discrete semiconductor device for analog and digital circuits requiring moderate power handling and high voltage tolerance. The device is housed in a TO-92-3 through-hole package, facilitating easy integration into printed circuit boards for various electronic equipment.

Replacement Considerations

Consult the manufacturer's ordering information table for alternative part numbers within the same series. Note that variants such as 2N5551TA, 2N5551TF, and 2N5551BU are listed as active, while others like 2N5551CTA and 2N5551YTA are discontinued. Verify electrical parameter compatibility before substituting.

2N5551G2N5551G
$0.07
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