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The onsemi 2N5551RLRA is an NPN silicon general-purpose amplifier transistor housed in a TO-92-3 (Case 135AR) lead-formed package. It supports a maximum collector-emitter voltage of 160 V and a continuous collector current of 600 mA. The device features a total power dissipation of 625 mW at 25°C, with a thermal resistance junction-to-ambient of 200 °C/W. Electrical characteristics include a DC current gain (hFE) ranging from 80 to 250 at IC = 10 mA, and a transition frequency (fT) of 100 MHz at IC = 10 mA. Operating temperatures span from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and availability status. The provided datasheet indicates that certain variants within the 2N5551 series have been discontinued; ensure the exact part number is currently active before finalizing procurement plans.
Select this component when a single NPN transistor with 160 V breakdown voltage and moderate current handling is required. Ensure the application operates within the 625 mW power dissipation limit and consider the thermal resistance values for proper heat management in the intended circuit environment.
This device belongs to the 2N5551 family of NPN silicon transistors manufactured by onsemi. It is specifically engineered for general-purpose high-voltage amplification tasks. The component utilizes standard TO-92-3 leaded packages suitable for through-hole assembly processes.
Consult the manufacturer's discontinuation notice for alternative sourcing options if the specific variant is unavailable. Cross-reference electrical parameters such as VCEO, IC, and hFE with other NPN transistors in the same voltage class.