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Product Detailed Parameters
- Description：TRANS NPN 50V 0.8A TO-46-3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：800 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
- Power - Max：500 mW
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AB, TO-46-3 Metal Can
- Supplier Device Package：TO-46-3
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Overview
The 2N5582 is a silicon NPN single bipolar junction transistor (BJT) designed for through-hole mounting. It features a maximum collector-emitter voltage of 50 V and a collector-base voltage of 75 V, with an emitter-base voltage rating of 6 V. The device supports a maximum DC collector current of 800 mA and dissipates up to 500 mW of power. It operates within a temperature range of -55°C to +200°C. The collector-emitter saturation voltage is specified at 300 mV. The component is supplied in bulk packaging.
Feature Summary
- Utilizes silicon technology for robust small-signal switching and amplification applications.
- Supports high-temperature operation up to 200°C for demanding environments.
- Provides single NPN configuration for discrete circuit integration.
Applications
- Small-signal amplification circuits
- General-purpose switching applications
- Discrete transistor stages
Procurement Notes
Verify the specific revision level against the manufacturer's Product Change Notification dated January 23, 2024, prior to finalizing procurement. Confirm that the RoHS status aligns with project requirements, as indicated by the 'N' designation in official documentation. Ensure the through-hole package type matches the intended PCB layout constraints.
Selection Notes
Select this component when a silicon NPN BJT with a 50 V collector-emitter voltage rating is required. The 800 mA current capacity and 500 mW power dissipation define its operational limits. Consider the wide operating temperature range if the application involves extreme thermal conditions. Verify that the through-hole installation style is compatible with the assembly process.
Part Context
The 2N5582 belongs to the Bipolar Junction Transistor (BJT) category manufactured by Microchip Technology. It is classified as a small-signal device suitable for general-purpose electronic designs. The part is distinct from radiation-hardened variants such as the JANTX2N5582, which shares similar electrical characteristics but targets different qualification standards.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Evaluate equivalent NPN small-signal transistors based on matching voltage, current, and package specifications.
