2N5584

Overview

The Microchip Technology 2N5584 is a high-voltage NPN silicon planar epitaxial transistor designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 600V, providing robust performance in high-voltage circuits. The device offers a DC current gain (hFE) range typically between 10 and 100 at specified operating conditions, ensuring reliable signal amplification. Packaged in a TO-92 plastic case, it supports continuous collector current up to 100mA. Key electrical characteristics include a collector-base breakdown voltage of 700V and an emitter-base breakdown voltage of 7V, making it suitable for flyback transformer drivers and high-voltage pulse generation.

Feature Summary

• High voltage capability with 600V collector-emitter breakdown rating
• Planar epitaxial construction for improved reliability and thermal stability
• Suitable for high-frequency switching and linear amplification tasks

Applications

• Flyback transformer drivers in CRT displays and power supplies
• High-voltage pulse generation circuits
• General-purpose switching applications requiring high voltage isolation

Procurement Notes

Verify the specific manufacturer datasheet revision and mechanical drawings before integration. Confirm that the TO-92 package dimensions match your PCB footprint requirements. Ensure thermal management strategies account for the device's power dissipation limits under your specific load conditions. Cross-reference part markings to distinguish genuine components from potential counterfeits.

Selection Notes

Select this component when circuit designs require high voltage handling capabilities exceeding standard low-voltage transistors. Consider the 600V VCEO rating for safety margins in mains-connected or inductive load environments. Evaluate the hFE spread to ensure consistent gain across production batches if linear operation is critical. Verify compatibility with driving circuitry given the base-emitter voltage constraints.

Part Context

The 2N5584 belongs to the family of high-voltage NPN bipolar junction transistors commonly used in legacy and industrial electronics. It serves as a direct replacement for older military-grade specifications in modern commercial designs. Microchip Technology maintains production standards for these discrete semiconductors to support long-term availability in equipment requiring extended lifecycles.

Replacement Considerations

• 2N5584A
• 2N5585

FAQ

What is the maximum collector-emitter voltage for the 2N5584?

The maximum collector-emitter voltage (VCEO) is rated at 600V.

Does the 2N5584 support high-frequency operation?

Yes, it is designed for general-purpose switching and amplification, supporting frequencies typical for audio and intermediate frequency applications.

What package type does the 2N5584 use?

It is housed in a TO-92 plastic encapsulated package.