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The MPSW63RLRA is a PNP Darlington transistor manufactured by onsemi, housed in a TO-92-3 (TO-226) through-hole package. It features a maximum collector-emitter voltage of 30 V and an emitter-base voltage of 10 V. The device supports a continuous DC collector current of 500 mA with a power dissipation rating of 1 W. Operating temperatures range from -55 C to +150 C. The component exhibits a minimum DC current gain (hFE) between 5000 and 10000, with a maximum collector cutoff current of 100 nA.
Verify the exact part number MPSW63RLRA against official onsemi documentation, as the provided reference data lists this specific suffix under the MPSW63 series. Confirm availability status, as the source indicates the component may be discontinued. Ensure the ordering information matches the required Darlington PNP specification and TO-92 package type before finalizing procurement.
Select this component when high current gain is required in a small through-hole package. Verify that the 30 V collector-emitter voltage and 500 mA current limits meet the circuit requirements. Consider the 1 W power dissipation capability and ensure adequate heat sinking if operating near maximum ratings. Confirm compatibility with the intended PCB footprint for the TO-92-3 package.
This component belongs to the MPSW63 series of Darlington transistors produced by onsemi. It is categorized under bipolar junction transistors and specifically designed for applications requiring high gain and moderate current handling. The MPSW63RLRA variant utilizes a lead-free reel packaging format, aligning with modern environmental compliance standards while maintaining the standard TO-92 form factor.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult onsemi technical support or authorized distributors for verified cross-reference options compatible with the MPSW63 series specifications.