SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The General Semiconductor 2N5663 is a small signal NPN silicon bipolar junction transistor designed for general-purpose switching and amplification applications. It features a maximum collector current of 2A and a collector-emitter breakdown voltage of 300V. The device is housed in a TO-5 metal can package with three pins, suitable for through-hole mounting. It operates within a temperature range of -65°C to +175°C.
Verify the manufacturer designation carefully, as the 2N5663 part number has been produced by multiple entities including Microsemi and Microchip Technology. Confirm the specific datasheet revision and qualification standards (such as MIL-PRF-19500) required for your application. Ensure the package type matches the TO-5 specification and check for any RoHS compliance requirements if applicable to your manufacturing process.
Select this component when a high-voltage NPN transistor with moderate current capacity is needed in a hermetic or robust metal package. Consider the TO-5 form factor for legacy designs or applications requiring superior thermal dissipation compared to plastic packages. Evaluate the 300V rating against circuit peak voltages to ensure adequate safety margins during transient events.
The 2N5663 belongs to a family of military-grade small signal transistors often associated with Microsemi and Microchip Technology product lines. These devices are typically qualified under strict reliability standards such as MIL-PRF-19500. The part is distinct from other 2N series transistors by its specific combination of 300V blocking voltage and 2A current handling in a classic metal can package.
Cross-reference with other 2N5663 variants from different manufacturers to ensure pinout and electrical parameter compatibility. Verify that substitute parts meet the same MIL-PRF-19500 qualification levels if used in regulated environments. Check for equivalent TO-5 packages and similar hFE ranges to maintain circuit performance.