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The Microchip Technology 2N5665 is a silicon NPN power bipolar junction transistor designed for through-hole mounting. It features a maximum collector-emitter voltage of 300 V and a collector-base voltage of 400 V, with an emitter-base voltage rating of 6 V. The device supports a maximum DC collector current of 5 A and dissipates up to 2.5 W of power. It operates within a temperature range of -65 °C to +200 °C, with a collector-emitter saturation voltage of 400 mV.
Verify the specific package variant against design requirements, as the standard commercial version uses a plastic through-hole package while military variants utilize metal TO-66 cases. Confirm RoHS compliance status, as the standard 2N5665 is listed as non-compliant in official documentation. Validate manufacturer source and lot traceability for critical applications requiring strict quality assurance standards.
Select this component when high voltage handling and wide temperature operation are required. Ensure the circuit design accommodates the 2.5 W power dissipation limit without excessive external cooling if using the plastic package. Compare against lower voltage alternatives like the 2N5660 if system requirements do not necessitate the 300 V rating.
This part belongs to the 2N56xx series of NPN power transistors manufactured by Microchip Technology. The series provides various voltage and current ratings for different power management needs. The 2N5665 specifically targets applications requiring higher voltage tolerance compared to its lower-rated counterparts in the same family.
JANTX2N5665 is a verified military-grade equivalent featuring a metal TO-66 package.