2N5686G

Overview

The onsemi 2N5686G is a silicon NPN bipolar junction transistor designed for high-power applications. It features a maximum collector current of 50 A and a collector-emitter voltage rating of 80 V. The device operates within a temperature range of -65°C to +200°C, utilizing a TO-204 through-hole package. With a power dissipation capacity of 300 W and a transition frequency of 2 MHz, it supports robust switching performance in demanding environments.

Feature Summary

• High thermal stability enabling operation up to 200°C junction temperature
• Robust construction for high-current handling capabilities
• Through-hole mounting for secure mechanical attachment

Applications

• Industrial motor control systems
• Power supply output stages
• High-current switching circuits

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with onsemi or authorized distributors before integration. Confirm that the TO-204 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 300 W power dissipation under actual operating conditions.

Selection Notes

Select this component when designs require high continuous collector current and wide operating temperature ranges. The TO-204 package provides superior heat dissipation compared to smaller form factors. Consider the 80 V breakdown voltage limits to ensure sufficient headroom for transient spikes in the target circuit application.

Part Context

This part belongs to the standard discrete semiconductor product line from onsemi. It serves as a general-purpose high-power NPN transistor suitable for industrial and commercial electronics. The component represents legacy technology adapted for modern high-reliability applications requiring proven silicon performance.

Replacement Considerations

Cross-reference with other manufacturers offering equivalent TO-204 NPN transistors rated for 50 A and 80 V. Verify pinout compatibility and thermal resistance characteristics to ensure seamless substitution without redesigning the heatsinking infrastructure.