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The Central Semiconductor Corp 2N5817 APM TIN/LEAD is a small-signal NPN silicon bipolar junction transistor housed in a TO-92 package. It features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 300mA. The device operates within a junction temperature range of -65°C to +150°C with a power dissipation rating of 625mW. Key electrical characteristics include a DC current gain (hFE) of at least 7000 when tested at 5V and 2mA, and a transition frequency of 60MHz.
Verify the specific suffix 'APM TIN/LEAD' against the manufacturer's current datasheet to confirm plating composition and RoHS status. Ensure the ordering code matches the exact pinout configuration required by the target PCB footprint. Cross-reference the part number with authorized distributors to validate authenticity and traceability before finalizing procurement.
Select this component when a high-gain NPN transistor is required for low-current applications. The 60MHz transition frequency supports moderate-speed switching or amplification tasks. Consider the TO-92 package constraints regarding thermal management and physical space availability on the circuit board layout.
This part belongs to the standard small-signal transistor family used widely in consumer electronics and industrial control systems. It serves as a fundamental active element for amplification and switching functions. The TO-92 form factor remains a common choice for prototyping and general-purpose discrete circuit designs.
Public confirmed substitute part numbers are not available in the provided documentation.