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The Central Semiconductor Corp 2N5817 TRE TIN/LEAD is a silicon Schottky barrier rectifier designed for low voltage and high frequency applications. It features a single element configuration housed in the DO-41 axial plastic package. The device supports a maximum repetitive peak reverse voltage of 20V and a continuous forward current of 1A. Key electrical characteristics include a low forward voltage drop to minimize power loss and high surge current capability for transient protection.
Verify the specific ordering suffix 'TRE TIN/LEAD' against the manufacturer's official datasheet to confirm lead-free status or tin/lead composition requirements. Ensure the DO-41 package dimensions match the target PCB footprint. Confirm RoHS compliance status directly with the supplier as specifications may vary by production batch.
Select this component for designs requiring fast switching speeds and minimal conduction losses at low voltages. The DO-41 package provides robust through-hole mounting capabilities. Verify that the 20V reverse voltage rating exceeds the maximum circuit peak inverse voltage. Ensure thermal management aligns with the 625mW power dissipation limit under operating conditions.
This part belongs to the standard Schottky rectifier family from Central Semiconductor. It shares functional similarities with industry-standard equivalents like the 1N5817 series. The device is categorized under discrete semiconductor diodes and rectifiers. It serves as a general-purpose solution for DC-DC conversion and signal clamping tasks.
Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing with generic 1N5817 specifications is recommended only if verified by the manufacturer.