2N5817 TRE TIN/LEAD

2N5817 TRE TIN/LEAD

$0.43
  • Description:40V 750MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:74d03892c61a Category: Brand:

  
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Product Detailed Parameters

  • Description:40V 750MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):750 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:750mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 2mA, 2V
  • Power - Max:625 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

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2N5817 TRE TIN/LEAD

Overview

The Central Semiconductor Corp 2N5817 TRE TIN/LEAD is a silicon Schottky barrier rectifier designed for low voltage and high frequency applications. It features a single element configuration housed in the DO-41 axial plastic package. The device supports a maximum repetitive peak reverse voltage of 20V and a continuous forward current of 1A. Key electrical characteristics include a low forward voltage drop to minimize power loss and high surge current capability for transient protection.

Feature Summary

  • Schottky barrier chip construction with guard ring die design for enhanced transient overvoltage protection
  • Low forward voltage drop and negligible switching losses for high efficiency operation
  • High surge current capability suitable for demanding circuit conditions

Applications

  • Low voltage, high frequency inverters
  • Free wheeling diode circuits
  • Polarity protection applications
  • Small battery chargers

Procurement Notes

Verify the specific ordering suffix 'TRE TIN/LEAD' against the manufacturer's official datasheet to confirm lead-free status or tin/lead composition requirements. Ensure the DO-41 package dimensions match the target PCB footprint. Confirm RoHS compliance status directly with the supplier as specifications may vary by production batch.

Selection Notes

Select this component for designs requiring fast switching speeds and minimal conduction losses at low voltages. The DO-41 package provides robust through-hole mounting capabilities. Verify that the 20V reverse voltage rating exceeds the maximum circuit peak inverse voltage. Ensure thermal management aligns with the 625mW power dissipation limit under operating conditions.

Part Context

This part belongs to the standard Schottky rectifier family from Central Semiconductor. It shares functional similarities with industry-standard equivalents like the 1N5817 series. The device is categorized under discrete semiconductor diodes and rectifiers. It serves as a general-purpose solution for DC-DC conversion and signal clamping tasks.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing with generic 1N5817 specifications is recommended only if verified by the manufacturer.

2N5817 TRE TIN/LEAD2N5817 TRE TIN/LEAD
$0.43
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