2N5822 TIN/LEAD

$1.47

Description：60V 750MA 625MW TH TRANSISTOR-SM
Series：-

SKU:7ee7ca310a5b Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：60V 750MA 625MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：750 mA
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 2mA, 2V
Power - Max：1.5 W
Frequency - Transition：120MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5822 TIN/LEAD

Overview

The Central Semiconductor Corp 2N5822 TIN/LEAD is a single NPN bipolar junction transistor (BJT) designed for through-hole mounting in TO-92-3 packages. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 750 mA. The device supports a power dissipation of 1.5 W and offers a transition frequency of 120 MHz. DC current gain is specified at a minimum of 100 under standard test conditions, with a maximum collector cutoff current of 100 nA. The component operates within a temperature range of -65°C to 150°C.

Feature Summary

Single NPN configuration optimized for general-purpose switching and amplification tasks
High current handling capability suitable for moderate load applications
Wide thermal operating range ensuring stability across extreme environmental conditions

Applications

General-purpose signal amplification circuits
Low-frequency switching applications
Audio pre-amplifier stages

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm lead-free or tin/lead composition requirements. Confirm RoHS compliance status directly with the supplier as specifications may vary by production batch. Ensure the TO-92-3 package dimensions match your PCB footprint constraints before finalizing procurement orders.

Selection Notes

Select this component when a robust NPN transistor with high current capacity is required for through-hole designs. Compare the 120 MHz transition frequency against circuit speed requirements. Evaluate the 1.5 W power dissipation limit relative to expected thermal loads in the target application environment.

Part Context

This part belongs to the 2N5822/5823 series manufactured by Central Semiconductor Corp. The 2N5822 serves as the NPN counterpart to the PNP 2N5823 variant. Both devices share similar electrical characteristics and physical packaging, facilitating complementary push-pull configurations in amplifier designs.