2N5884

Overview

The onsemi 2N5884 is a PNP silicon high-power transistor designed for general-purpose power amplifier and switching applications. It features a collector-emitter voltage of 80 Vdc, continuous collector current of 25 Adc, and peak current of 50 Adc. The device offers a maximum power dissipation of 200 W at 25°C case temperature with a thermal resistance of 0.875 °C/W. Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 10 A, a maximum collector-emitter saturation voltage of 1.0 Vdc at 15 A, and a current-gain bandwidth product of 4.0 MHz. Operating temperatures range from -65°C to +200°C.

Feature Summary

• Complementary silicon high-power construction optimized for linear and switching industrial equipment
• Low collector-emitter saturation voltage capability for efficient power handling
• High current gain bandwidth product supporting frequency-sensitive applications
• Robust junction-to-case thermal performance for high-power dissipation

Applications

• General-purpose power amplifiers
• Industrial switching applications
• Linear amplifier circuits in industrial equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package style and environmental compliance. Confirm availability status as manufacturing lifecycles change. Ensure the procurement channel provides valid traceability for the TO-204 (TO-3) metal case package. Cross-reference the part number with the latest datasheet revision to ensure parameter accuracy before integration into designs.

Selection Notes

Select this component when designing circuits requiring high current handling up to 25 Amperes with an 80 Volt rating. Consider the TO-204 metal case for superior heat dissipation compared to plastic packages. Evaluate the thermal resistance and derating curves to ensure the junction temperature remains within safe operating limits under expected load conditions. Verify base drive requirements against the specified saturation voltages for optimal switching performance.

Part Context

The 2N5884 belongs to the complementary 2N588x series of silicon high-power transistors manufactured by onsemi. This series includes PNP devices (2N5883, 2N5884) and NPN devices (2N5885, 2N5886). These components are designated as Preferred Devices, indicating they are recommended choices for future use and offer best overall value within the manufacturer's portfolio for high-power discrete semiconductor applications.

Replacement Considerations

Public confirmed substitute part numbers: 2N5883 (complementary PNP variant), 2N5885 (NPN variant), 2N5886 (NPN variant).