2N5950_J18Z

2N5950_J18Z

$0.05
  • Description:RF MOSFET JFET 30V TO92-3
  • Series:-

SKU:9fe935feed13 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET JFET 30V TO92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Technology:JFET
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):15mA
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:30 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Configuration:N-Channel

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2N5950_J18Z

Overview

The 2N5950_J18Z is an N-Channel RF Amplifier JFET designed primarily for electronic switching applications, such as low on-resistance analog switching. It features a TO-92-3 package with formed leads and operates within a junction temperature range of -55°C to 150°C. The device supports a Drain-Gate Voltage of 30 V and a Gate-Source Voltage of -30 V. Electrical characteristics include a Gate-Source Cut-off Voltage (VGS(off)) ranging from -2.5 V to -6.0 V at ID = 100nA, and a Zero-Gate Voltage Drain Current (IDSS) between 10 mA and 15 mA at VDS = 15 V. The Drain-Source On Resistance (RDS(on)) is specified at 210 Ω under specific test conditions.

Feature Summary

  • Designed for low on-resistance analog switching applications
  • Utilizes N-Channel RF Amplifier technology
  • Suitable for electronic switching circuits

Applications

  • Electronic switching applications
  • Low on-resistance analog switching

Procurement Notes

Verify the exact ordering suffix against official manufacturer documentation to confirm package type and lead configuration. Confirm current production status, as this component may be obsolete or subject to change without notice. Ensure compatibility with required voltage ratings and thermal dissipation limits for the target application environment.

Selection Notes

Select based on required drain-source on-resistance and gate-source cut-off voltage specifications. Verify that the TO-92-3 through-hole package meets board layout constraints. Consider thermal resistance values when designing heat dissipation strategies for continuous operation above 25°C ambient temperature.

Part Context

The 2N5950 series represents an N-Channel RF Amplifier originally developed by Fairchild Semiconductor. This component family is engineered for high-frequency performance in switching roles. The specific part number indicates variations in packaging or screening levels compared to standard commercial versions.

Replacement Considerations

Consult official datasheets for pin-compatible alternatives. Verify electrical parameters such as VGS(off), IDSS, and RDS(on) match original design requirements before substitution.

2N5950_J18Z2N5950_J18Z
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