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The 2N5950_J18Z is an N-Channel RF Amplifier JFET designed primarily for electronic switching applications, such as low on-resistance analog switching. It features a TO-92-3 package with formed leads and operates within a junction temperature range of -55°C to 150°C. The device supports a Drain-Gate Voltage of 30 V and a Gate-Source Voltage of -30 V. Electrical characteristics include a Gate-Source Cut-off Voltage (VGS(off)) ranging from -2.5 V to -6.0 V at ID = 100nA, and a Zero-Gate Voltage Drain Current (IDSS) between 10 mA and 15 mA at VDS = 15 V. The Drain-Source On Resistance (RDS(on)) is specified at 210 Ω under specific test conditions.
Verify the exact ordering suffix against official manufacturer documentation to confirm package type and lead configuration. Confirm current production status, as this component may be obsolete or subject to change without notice. Ensure compatibility with required voltage ratings and thermal dissipation limits for the target application environment.
Select based on required drain-source on-resistance and gate-source cut-off voltage specifications. Verify that the TO-92-3 through-hole package meets board layout constraints. Consider thermal resistance values when designing heat dissipation strategies for continuous operation above 25°C ambient temperature.
The 2N5950 series represents an N-Channel RF Amplifier originally developed by Fairchild Semiconductor. This component family is engineered for high-frequency performance in switching roles. The specific part number indicates variations in packaging or screening levels compared to standard commercial versions.
Consult official datasheets for pin-compatible alternatives. Verify electrical parameters such as VGS(off), IDSS, and RDS(on) match original design requirements before substitution.