2N5952_D74Z

Overview

The onsemi 2N5952_D74Z is an N-channel RF amplifier JFET in a TO-92 package. It features a drain-gate voltage of 30 V and a gate-source breakdown voltage of -30 V. The device operates with a zero-gate voltage drain current ranging from 4.0 to 8.0 mA at 15 V. Forward transfer conductance spans 2000 to 6500 µmhos at 1.0 kHz. Input capacitance is 6.0 pF, and reverse transfer capacitance is 2.0 pF at 1.0 MHz. Total device dissipation is 350 mW, derating by 2.8 mW/°C above 25°C. Junction temperature range extends from -55°C to +150°C.

Feature Summary

• Designed primarily for electronic switching applications such as low on resistance analog switching.

Applications

• Electronic switching
• Low on resistance analog switching

Procurement Notes

Verify the component status against official manufacturer records before procurement. Confirm that the D74Z suffix corresponds to the specific bulk packaging configuration documented in the datasheet. Ensure the sourcing channel provides traceability to Fairchild Semiconductor or authorized distributors to guarantee authenticity and compliance with specified electrical characteristics.

Selection Notes

Select this component for circuits requiring N-channel JFET performance with a 30 V voltage rating. Evaluate the thermal resistance parameters, specifically the junction-to-ambient value of 357 °C/W, to ensure adequate heat dissipation within the operating temperature range. Verify that the forward transfer conductance meets the signal amplification requirements of the target application design.

Part Context

This part belongs to the 2N5952 series of N-channel RF amplifiers originally manufactured by Fairchild Semiconductor. The device utilizes silicon technology and is housed in a standard TO-92 three-pin through-hole package. It serves as a discrete semiconductor solution for radio frequency and small-signal processing tasks.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements must match the TO-92 package, N-channel polarity, and key electrical limits including the 30 V breakdown voltage and 350 mW power dissipation rating.

FAQ

What is the maximum total device dissipation?

The maximum total device dissipation is 350 mW at 25°C ambient temperature, with a derating factor of 2.8 mW/°C above that temperature.

What is the gate-source cutoff voltage range?

The gate-source cutoff voltage ranges from -1.3 V to -3.5 V when measured at a drain-source voltage of 15 V and a drain current of 100 nA.

What is the noise figure specification?

The noise figure is typically 2.0 dB when measured with a source resistance of 1.0 kΩ at a frequency of 1.0 kHz.