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The onsemi 2N5952_D75Z is an N-channel RF amplifier JFET housed in a TO-92 package. It features a Drain-Gate Voltage of 30 V and a Gate-Source Breakdown Voltage of -30 V. The device operates with a Zero-Gate Voltage Drain Current ranging from 4.0 to 8.0 mA at 15 V. Forward Transfer Conductance spans 2000 to 6500 µmhos at 1.0 kHz, while Input Capacitance is 6.0 pF and Reverse Transfer Capacitance is 2.0 pF at 1.0 MHz. Total Device Dissipation is rated at 350 mW, derating by 2.8 mW/°C above 25°C.
Verify the component status carefully, as the source datasheet indicates Fairchild Semiconductor reserves the right to make changes without notice. Confirm that the specific ordering suffix matches the required pinout and electrical tolerances. Ensure the supplier provides traceability documentation consistent with the manufacturer's lifecycle definitions to avoid receiving obsolete or formative design units.
Select this component when a small-signal N-channel JFET is required for RF amplification or analog switching. Consider the TO-92 through-hole package constraints and the 350 mW power dissipation limit. Evaluate the noise figure and capacitance values against circuit requirements to ensure compatibility with the intended frequency range and signal integrity standards.
The 2N5952 is an N-channel Junction Field-Effect Transistor originally documented by Fairchild Semiconductor. The D75Z suffix typically denotes a bulk packaging configuration within the TO-92 family. This part belongs to a series of general-purpose small-signal FETs historically used in RF and audio circuits before being superseded by newer fabrication processes.
BF244A, J210, MPF102, BF256A, 2N3819, J304, J309, MMBF102.