2N5952_J35Z

Overview

The onsemi 2N5952_J35Z is an N-channel RF JFET transistor housed in a TO-92-3 package. It features a Drain-Gate Voltage of 30 V and a Gate-Source Breakdown Voltage of -30 V. The device operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 350 mW at 25°C. Key electrical characteristics include a Zero-Gate Voltage Drain Current (IDSS) ranging from 4.0 mA to 8.0 mA, a Forward Transfer Conductance (gfs) between 2000 µmhos and 6500 µmhos, and a Noise Figure as low as 2.0 dB.

Feature Summary

• Designed for electronic switching applications requiring low on-resistance analog switching capabilities.
• Optimized for RF amplifier circuits with high forward transfer conductance and low noise figure specifications.

Applications

• Low on-resistance analog switching
• RF amplifier stages

Procurement Notes

Verify the manufacturer origin carefully, as datasheets indicate Fairchild Semiconductor while distributors list onsemi. Confirm RoHS compliance status through official documentation. Check current production status, as some sources classify this component as obsolete or discontinued. Ensure the specific ordering suffix matches the required packaging configuration before finalizing procurement orders.

Selection Notes

Select this component for designs requiring N-channel JFET performance in a TO-92 form factor. Evaluate the IDSS range of 4.0 mA to 8.0 mA against circuit biasing requirements. Consider the thermal resistance values when designing for ambient temperatures exceeding 25°C. Verify that the 350 mW power dissipation limit accommodates the expected operating conditions without excessive derating.

Part Context

This part belongs to the RF JFET Transistors category. It is historically associated with Fairchild Semiconductor's manufacturing processes, specifically sourced from process 50. The component represents a legacy silicon-based small signal FET solution commonly utilized in vintage or specialized radio frequency equipment designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires consulting official manufacturer obsolescence notices or equivalent functional replacement guides.

FAQ

What is the maximum Gate-Source Voltage rating?

The absolute maximum Gate-Source Voltage (VGS) is rated at -30 V.

What is the typical Input Capacitance value?

The Input Capacitance (Ciss) is typically 6.0 pF at VDS = 15V, VGS = 0, and f = 1.0MHz.

How does the device handle thermal dissipation?

The device has a Total Device Dissipation of 350 mW at 25°C, with a thermal resistance junction-to-ambient of 357 °C/W.