2N5955

2N5955

$37.35
  • Description:TRANS PNP 60V 6A TO66
  • Series:-

SKU:17b70fd45dc1 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 60V 6A TO66
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):6:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:40 W
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-213AA, TO-66-2
  • Supplier Device Package:TO-66 (TO-213AA)

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2N5955

Overview

The Microchip Technology 2N5955 is a single-element PNP silicon power bipolar transistor housed in a hermetically sealed TO-66 metal package. It features a maximum collector current of 6 A and a collector-emitter breakdown voltage of 60 V to 65 V. The device supports a maximum power dissipation of 40 W and operates within a temperature range of -65°C to +175°C. Key electrical characteristics include a minimum DC current gain (hFE) of 20, a transition frequency of 5 MHz, and a low collector saturation voltage.

Feature Summary

  • Hermetically sealed TO-66 metal package for environmental protection
  • High power handling capability with 40 W dissipation rating
  • Robust safe operating area for reliable switching performance

Applications

  • Power electronics circuits requiring high current switching
  • Signal amplification in rugged environments
  • Complementary applications to types 2N6372/6373/6374

Procurement Notes

Verify the specific manufacturer source, as the 2N5955 designation is utilized by multiple vendors including Semelab and GE/RCA. Confirm that the required unit meets the necessary military specifications such as JAN, JANTX, or JANS if hermetic sealing and radiation hardness are critical for the application. Ensure the TO-66 package dimensions match the thermal management design.

Selection Notes

Select this component when a hermetically sealed PNP transistor is required for high-power applications. The 6 A collector current and 40 W power dissipation make it suitable for demanding load conditions. Consider the complementary nature to the 2N637x series if push-pull configurations are needed. Verify the specific breakdown voltage rating (60 V vs 65 V) against the circuit requirements.

Part Context

The 2N5955 belongs to the family of high-power bipolar transistors designed for industrial and military use. Manufactured by Microchip Technology and other authorized producers, it provides a robust solution for power switching. The TO-66 package ensures durability in harsh conditions, distinguishing it from standard plastic-packaged equivalents.

Replacement Considerations

Public confirmed substitutes include the 2N6372, 2N6373, and 2N6374 as complementary devices. Direct replacements may vary by manufacturer; verify pinout compatibility and absolute maximum ratings before substitution.

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