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The Microchip Technology 2N5955 is a single-element PNP silicon power bipolar transistor housed in a hermetically sealed TO-66 metal package. It features a maximum collector current of 6 A and a collector-emitter breakdown voltage of 60 V to 65 V. The device supports a maximum power dissipation of 40 W and operates within a temperature range of -65°C to +175°C. Key electrical characteristics include a minimum DC current gain (hFE) of 20, a transition frequency of 5 MHz, and a low collector saturation voltage.
Verify the specific manufacturer source, as the 2N5955 designation is utilized by multiple vendors including Semelab and GE/RCA. Confirm that the required unit meets the necessary military specifications such as JAN, JANTX, or JANS if hermetic sealing and radiation hardness are critical for the application. Ensure the TO-66 package dimensions match the thermal management design.
Select this component when a hermetically sealed PNP transistor is required for high-power applications. The 6 A collector current and 40 W power dissipation make it suitable for demanding load conditions. Consider the complementary nature to the 2N637x series if push-pull configurations are needed. Verify the specific breakdown voltage rating (60 V vs 65 V) against the circuit requirements.
The 2N5955 belongs to the family of high-power bipolar transistors designed for industrial and military use. Manufactured by Microchip Technology and other authorized producers, it provides a robust solution for power switching. The TO-66 package ensures durability in harsh conditions, distinguishing it from standard plastic-packaged equivalents.
Public confirmed substitutes include the 2N6372, 2N6373, and 2N6374 as complementary devices. Direct replacements may vary by manufacturer; verify pinout compatibility and absolute maximum ratings before substitution.