2N5958

2N5958

$382.40
  • Description:TRANS PNP 100V 20A TO-61
  • Series:-

SKU:2e4c64123d65 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 100V 20A TO-61
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):20 A
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:175 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Stud Mount
  • Package / Case:TO-211MA, TO-210AC, TO-61-4, Stud
  • Supplier Device Package:TO-61

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2N5958

Overview

The Microchip Technology 2N5958 is a silicon PNP power bipolar junction transistor (BJT) designed for high-power switching and amplification applications. It utilizes a planar epitaxial structure to ensure stable performance under demanding electrical conditions. The device is housed in a robust metal can package, typically TO-3, which facilitates efficient heat dissipation and secure mounting on heatsinks. This component is engineered for reliability in industrial environments where consistent current handling and voltage blocking capabilities are critical.

Feature Summary

  • Utilizes a planar epitaxial silicon construction for enhanced thermal stability and electrical consistency.
  • Features a rugged metal can package design optimized for effective heat dissipation during high-power operation.
  • Engineered as a PNP power transistor capable of managing significant collector currents and voltage drops.

Applications

  • High-power linear and switching amplifier circuits
  • Industrial motor control systems requiring robust PNP switching
  • Power supply regulation stages utilizing discrete transistor topology

Procurement Notes

Verify the specific manufacturer lot code and date code against the latest Microchip Technology datasheet revision to ensure compliance with current manufacturing standards. Confirm that the package type matches the intended PCB or chassis mounting requirements, as variations may exist between legacy and current production runs. Ensure all handling procedures adhere to electrostatic discharge precautions appropriate for sensitive semiconductor devices.

Selection Notes

Select this component when a high-current PNP switching solution is required within a metal can form factor. Evaluate the thermal resistance characteristics of the TO-3 package against the expected power dissipation in the target application. Compare the DC current gain and breakdown voltage specifications against circuit requirements to ensure adequate margin for reliable operation under varying load conditions.

Part Context

The 2N5958 belongs to the family of standard military-grade and industrial power transistors produced by Microchip Technology. These components are characterized by their durability and long-term availability compared to modern surface-mount alternatives. The part serves as a direct replacement for older industry-standard designs that specified this particular NPN/PNP counterpart, maintaining compatibility with established schematic architectures.

Replacement Considerations

Consult official Microchip Technology substitution guides for verified equivalent parts. Cross-reference pinout configurations carefully when replacing with generic equivalents to prevent circuit damage due to incorrect emitter-base-collector alignment.

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