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Product Detailed Parameters
- Description：TRANS PNP 140V 16A TO204
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：16 A
- Voltage - Collector Emitter Breakdown (Max)：140 V
- Vce Saturation (Max) @ Ib, Ic：2V @ 4A, 16A
- Current - Collector Cutoff (Max)：2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 8A, 2V
- Power - Max：200 W
- Frequency - Transition：1MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Supplier Device Package：TO-204 (TO-3)
- Grade：-
- Qualification：-
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Overview
The onsemi 2N6031G is a high-voltage, high-power PNP silicon power transistor designed for demanding applications. It features a collector-emitter sustaining voltage of 140 Vdc and supports a maximum DC current of 10 Adc. The device exhibits a low collector-emitter saturation voltage of 1.0 Vdc at full load and maintains a minimum DC current gain of 15. Manufactured using silicon technology, it is housed in a TO-220AB package with through-hole mounting, suitable for robust thermal management.
Feature Summary
- Engineered for high-voltage switching regulator circuits and high-power audio amplifier applications
- Provides high collector-emitter sustaining voltage capability for reliable operation under stress
- Delivers low collector-emitter saturation voltage to minimize conduction losses
- Ensures stable performance with high DC current gain characteristics
Applications
- High-power audio amplifier output stages
- High-voltage switching regulator circuits
- General-purpose high-voltage switching applications
Procurement Notes
Verify the specific suffix 'G' against the manufacturer's official datasheet to confirm compliance with lead-free standards and RoHS directives. Confirm the package type matches the required mechanical footprint. Check for any recent Product Change Notifications or End-of-Life notices directly from onsemi documentation before finalizing procurement plans.
Selection Notes
Select this component when a PNP configuration is required for high-voltage environments up to 140 V. Ensure the thermal design accommodates the power dissipation capabilities inherent to the TO-220AB package. Verify that the drive circuitry can support the specified current gain requirements for efficient switching operations in the target application.
Part Context
This part belongs to the complementary silicon power transistor family from onsemi, often paired with NPN counterparts like the 2N6027G for push-pull configurations. It represents a legacy high-power discrete semiconductor solution focused on robustness and high-voltage handling capabilities for industrial and audio electronics.
Replacement Considerations
Consult onsemi datasheets for direct complementary pairs such as the 2N6027G. Evaluate other manufacturers offering 140V PNP transistors in TO-220 packages, ensuring pinout compatibility and matching electrical parameters like VCEO(sus) and hFE.
