2N6035G

Overview

The 2N6035G is a PNP plastic Darlington complementary silicon power transistor manufactured by onsemi. It features a collector-emitter sustaining voltage of 60 Vdc and supports a continuous collector current of 4.0 Adc with peak currents reaching 8.0 Apk. The device provides high DC current gain, typically 15,000 at 2.0 Adc, and operates within a junction temperature range of -65 to +150 °C. Total device dissipation is rated at 1.5 W at 25°C case temperature. It utilizes the TO-225 package (CASE 77-09) and includes built-in base-emitter shunt resistors for enhanced stability.

Feature Summary

• High DC Current Gain: Provides typical hFE values up to 15,000 under standard operating conditions.
• Robust Thermal Management: Designed with low thermal resistance junction-to-case characteristics for efficient heat dissipation.
• ESD Protection: Offers significant electrostatic discharge tolerance exceeding 8000 V via Human Body Model standards.
• Integrated Shunt Resistors: Monolithic construction incorporates built-in base-emitter shunt resistors to ensure stable operation.

Applications

• General-purpose amplifier circuits
• Low-speed switching applications
• Complementary power transistor pairs

Procurement Notes

Verify component authenticity through authorized onsemi distribution channels. Confirm RoHS compliance and Pb-Free status as indicated in the datasheet. Ensure proper handling procedures are followed due to ESD sensitivity ratings. Validate package dimensions against CASE 77-09 specifications prior to integration into PCB layouts.

Selection Notes

Select this component for applications requiring high current gain and moderate voltage handling capabilities. Consider the 60 V collector-emitter rating when designing circuits with corresponding supply voltages. Evaluate thermal requirements based on the 1.5 W dissipation limit at 25°C case temperature. Ensure compatibility with complementary NPN devices from the same series for push-pull configurations.

Part Context

This part belongs to the 2N603x series of plastic Darlington complementary silicon power transistors. It serves as the PNP counterpart to the 2N6039G NPN device. The series is designed for general-purpose amplifier and low-speed switching tasks. All variants share similar physical packaging and thermal characteristics while differing in voltage ratings.

Replacement Considerations

Direct substitutes include other 2N6035 equivalents from different manufacturers if pinout and electrical parameters match exactly. Verify that replacement parts maintain the same TO-225 package style and lead configuration. Check for equivalent DC current gain and saturation voltage specifications to ensure circuit performance consistency.

FAQ

What is the maximum collector-emitter voltage for the 2N6035G?

The maximum collector-emitter sustaining voltage (VCEO(sus)) for the 2N6035G is 60 Vdc when tested at IC = 100 mAdc and IB = 0.

Does the 2N6035G include internal resistors?

Yes, the device features monolithic construction with built-in base-emitter shunt resistors to improve stability and prevent false triggering.

What is the typical DC current gain at 2.0 Adc?

The typical DC current gain (hFE) is 15,000 when measured at IC = 2.0 Adc and VCE = 3.0 Vdc.