2N6043G

2N6043G

  • Description:TRANS NPN DARL 60V 8A TO-220
  • Series:-

SKU:41437672168a Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN DARL 60V 8A TO-220
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 16mA, 4A
  • Current - Collector Cutoff (Max):20µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 4A, 4V
  • Power - Max:75 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

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2N6043G

Overview

The 2N6043G is an NPN silicon power transistor manufactured by onsemi, housed in a TO-220AB flange-mount package. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 8 A. The device includes built-in base-emitter resistor and protection diode functionality within its Darlington configuration. Maximum power dissipation is rated at 75 W, with a junction temperature limit of 150 °C.

Feature Summary

  • Darlington configuration with integrated base-emitter resistor
  • Built-in collector-emitter protection diode
  • Flange-mount thermal management via collector connection

Applications

  • High-current switching applications
  • Power amplifier stages
  • Motor control circuits

Procurement Notes

Verify the specific suffix 'G' against the manufacturer's official datasheet to confirm RoHS compliance status and exact pinout compatibility. Ensure the TO-220AB package dimensions match the target PCB footprint requirements before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring high current gain and simplified drive circuitry due to the integrated resistor. Consider the 60 V voltage limit and 8 A current capacity when sizing heat sinks for the TO-220AB package under expected load conditions.

Part Context

This part belongs to the complementary silicon power transistor family from onsemi. It is designed as a medium-power device suitable for general-purpose switching and amplification tasks where robustness and ease of driving are prioritized over ultra-low saturation voltages.

Replacement Considerations

Consult official cross-reference guides for equivalents such as BDX53B or TIP110 variants, ensuring voltage and current ratings meet or exceed the original specifications.

2N6043G2N6043G

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