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Product Detailed Parameters
- Description：TRANS PNP 25V 0.5A TO-92-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：25 V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 1V
- Power - Max：625 mW
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The 2N6076 is a PNP bipolar junction transistor (BJT) manufactured by Central Semiconductor, housed in a TO-92 cylindrical plastic package. It features a maximum collector current of 0.1 A and a collector-emitter voltage rating of 25 V. The device is characterized as a low noise component with a minimum DC current gain (hFE) of 100. It operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Low noise design optimized for sensitive signal applications
- Single configuration suitable for discrete circuit integration
Applications
- Low noise amplifier circuits
- General purpose switching applications
Procurement Notes
Verify the manufacturer designation carefully, as the 2N6076 part number is associated with Central Semiconductor rather than Fairchild Semiconductor. Confirm lead compliance status, as specific records indicate non-compliance with certain environmental standards. Ensure the TO-92 package type matches the target board layout requirements before procurement.
Selection Notes
Select this component when a PNP transistor with low noise characteristics is required for low-voltage operations up to 25 V. The 100 mA current limit defines its suitability for small-signal processing tasks. Verify that the TO-92 through-hole package aligns with the assembly process constraints.
Part Context
The 2N6076 belongs to the category of discrete bipolar transistors. Unlike the MOSFETs listed in the provided knowledge base, this component utilizes BJT technology. It serves distinct roles in analog signal conditioning where low noise performance is critical, differing from the power switching functions typical of the other devices in the dataset.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FAQ
What is the maximum collector-emitter voltage for the 2N6076?
The maximum collector-emitter voltage is 25 V.
Is the 2N6076 a N-channel or PNP device?
The 2N6076 is a PNP bipolar junction transistor.
What is the minimum DC current gain specified for this transistor?
The minimum DC current gain (hFE) is 100.
